Abstract
Silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) are expected as power electronic devices for high radiative conditions, including nuclear plants and space. Radiation response of commercial-grade prototype SiC MOSFETs with applying the gate bias is of interest, in terms of installation of the device in robots or sensors working under such radioactive circumstances. Due to gamma-rays irradiation, the threshold voltages (Vth) of samples with un- and negative-biased up to −4.5 V slightly shift toward the negative voltage side. In contrast, the positive bias of 2.25 V shifts Vth more negatively. Positive charge densities trapped in the gate oxide of un- and positive-biased samples increased with increasing dose. However, no significant increase was observed for negative-biased samples of −2.25 and −4.5 V. We calculated characteristic parameters for the accumulation of holes in the gate oxide, σpJp which is defined as the product of current density due to holes generated by irradiation and capture cross section for a hole in a trap, and it is lower for these negative biased samples compared with the unbiased case. Application of appropriate negative gate biases to SiC MOSFETs during irradiation suppresses accumulation of positive charges in the gate oxide and negative shift of Vth, due to irradiation.
Highlights
Owing to its wide band gap and strong covalent bond of silicon carbide (SiC), SiC metal-oxidesemiconductor field effect transistors (MOSFETs) are known as power electronic devices with a higher radiation tolerance
The radiation response of SiC MOSFETs is of interest in terms of the application of this device for use in radiative conditions, including nuclear plants and space
The radiation response of commercially available or prototype SiC MOSFETs against gamma ray irradiation was studied by several authors [6,7,8,9,10,11,12]
Summary
Owing to its wide band gap and strong covalent bond of silicon carbide (SiC), SiC metal-oxidesemiconductor field effect transistors (MOSFETs) are known as power electronic devices with a higher radiation tolerance. The radiation response of commercially available or prototype SiC MOSFETs against gamma ray irradiation was studied by several authors [6,7,8,9,10,11,12]. Specific processes are employed to improve electric properties, including nitridation of the interface between the oxide and SiC. These characteristics of commercial or prototype SiC MOSFETs might make their electrical properties be more sensitive to irradiation compared with ones for the basic research. The radiation response was studied in terms of device structure and fabrication process [6], irradiation conditions, such as high temperature and humidity [7,8,10], and application of gate bias [11,12]
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