Abstract
Using deep-level transient spectroscopy (DLTS), we have studied the effect of Ga impurities upon defect generation and annealing behavior of radiation-induced defects, and carrier removal and minority-carrier lifetime degradation in Si single crystals irradiated with 1MeV electrons at room temperature. It is found that compared to the B impurity in p-type Si, the Ga impurity strongly suppresses the generation of the EC−0.18–0.21eV and EV+0.36eV defect centers, which play a dominant role in carrier removal as a deep donor state and act as a majority-carrier trapping center, and a recombination center. The effectiveness of the Ga impurity for suppressing the carrier removal effect with irradiation is also found in comparison to the B impurity.
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