Radiation resistance of transistor-and diode-type SiC detectors irradiated with 8-MeV protons

Abstract

Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ∼10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ∼30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5×1013 cm−2; in this case, the resolution is ≤10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ≈3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2×1014 cm−2.