Radiation resistance of GaAs–AlGaAs heterostructures doped with isovalent and rare-earth elements

Abstract

When GaAs–Si and GaAs–AlGaAs heterostructures are exposed to γ-quanta, radiation stimulated ordering is observed. However, the gettering efficiency in such systems falls for layer widths more than 1 μm. For this reason we seek effective methods of radiation resistance improvement of materials in which one would expect point radiation defects to be gettered not only at defect boundaries, but also in the active layer volume. S.i.GaAs–s.i.Al x Ga 1− x As– nGaAs : Te heterostructures are presented with epitaxial layers (doped with Yb or undoped), obtained by means of LPE (liquid-phase epitaxy). The electron concentration in nGaAs was found to be (1–3)×10 18 cm −3 for widths 1–3 μm. The samples were exposed to 60Co γ-quanta with doses of 10 5–10 7 rad. Investigations of irradiated samples by means of low-temperature (4.2 K) photoluminescence have shown considerable decrease of exciton halfwidth in the boundary spectra of nGaAs : Te : Yb epitaxial layers in comparison with nGaAs : Te layer spectra. This is caused by background impurity gettering which happens on the s.i.Al x Ga 1− x As– nGaAs heteroboundaries as well as in deformed regions in the epitaxial layer volume. Formation of such regions is caused by the difference between the covalent radii of Yb atoms and GaAs lattice atoms. The maximum effect of radiation stimulated gettering of dopants in nGaAs epitaxial layers is observed for Yb concentrations which are equal to 10 −4–10 −5 atomic fractions in a solution-melt. It is determined that the deformed regions in epitaxial layer volumes and heteroboundaries could be efficient drains for point radiation defects which form under radiation exposure. The investigations carried out showed that the doping of an epitaxial layers by rare-earth impurities provides considerable improvement in forming radiation resistant III–V materials.