Abstract
The radiation damage responses of fluorinated and non-fluorinated lateral PNP transistors are studied with specially designed gated-controlled lateral PNP transistors that allow for the extraction of the oxide trapped charge (Not) and interface trap (Nit) densities. All the samples are exposed in the Co-60γ ray with the dose rate of 0.5 Gy(Si)/s. After the irradiation, the buildup of Not and Nit of the samples with total dose is investigated by the gate sweep test technique. The results show that the radiation resistance of fluorinated lateral PNP transistors is significantly enhanced compared with the non-fluorinated ones.
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