Radiation-processed perovskite solar cells with fullerene-enhanced performance and stability

Abstract

Radiation-processed strategy is compatible with scalable manufacturing of perovskite solar cells (PSCs). Herein, we show such radiation-processed planar negative-intrinsic-positive (n-i-p) PSCs, which integrate radiation-processed electron/hole transporting layers (ETLs/HTLs) and light-absorbing layers (LALs). Infrared radiation annealing enables SnO 2 ETLs with a conductivity comparable to those annealed by hot plates and renders perovskite LALs with pure perovskite phase and prominent (111) orientation. With the benefit of chlorofullerene C 60 Cl 6 additives for LALs, PSCs based on Li/Co-bis(trifluoromethanesulphonyl)imide (TFSI)-doped spiro-OMeTAD HTLs exhibit a champion efficiency of 22% and excellent photostability, retaining 82% of their efficiencies after 504 h of illumination. With the solar-radiation-treated gadolinium-endohedral fullerene Gd@C 82 -doped spiro-OMeTAD, the radiation-processed PSCs show stable efficiencies of more than 20% and decent shelf stability, maintaining 92% of their efficiencies after 1,008 h in air. Based on that prototype of radiation-processed PSCs, this work implies that cost-efficient fullerene additives/dopants are beneficial to the feasible radiation strategy for fabricating efficient and stable PSCs. Perovskite with oriented crystal grains is prepared by infrared radiation annealing C 60 Cl 6 additives can suppress recombination and ion migration in perovskite films Gd@C 82 dopants can balance the conductivity and hydrophobicity of spiro-OMeTAD films Fullerene additive/dopant-treated solar cells show high efficiency and stability Wu et al. report a high-efficiency radiation-processed planar n-i-p perovskite solar cell by adding chlorofullerene C 60 Cl 6 additives in perovskite films and endohedral fullerene Gd@C 82 dopants in spiro-OMeTAD films. As a result, fullerene additives/dopants can improve the efficiency and stability for radiation-processed perovskite solar cells.