Abstract
We have studied changes in the hole transport properties of a smectic liquid crystalline semiconductor resulting from high-energy electron irradiation. The “radiation doping” results in sharply increased shallow trap densities and the onset of nearly trap-limited hopping conduction. A simple semiquantitative model provides estimates of the trap lifetime and the irradiation energy required to create a single trap. Experimental techniques to overcome parasitic effects due to increased molecular ion densities in irradiated samples are also discussed.
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