Abstract
The peculiarities of radiation degradation of n- and p- channel MOSFETs have been investigated. Radiation can induce both negative and positive charges in the SiO 2 -Si structure. The negative charges can be annealed at T=315°C, while an additional anneal at T=415°C also partly removes the radiation-induced positive charges. The changes of threshold voltage and transconductance after γ-radiation and subsequent thermal annealing are explained on the base of generation and annihilation of the various defects at Si-SiO 2 interface and in the SiO 2 .
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