Abstract
${\rm Ba}_{0.5}{\rm Sr}_{0.5}{\rm TiO}_3$ (BST) thin films were deposited on sapphire substrate by RF magnetron sputtering techniques and interdigital capacitor (IDC) structures were fabricated using photolithography. Gamma irradiation induced changes of the BST based tunable capacitor have been investigated under various doses from 0 kGy to 600 kGy. Structural and surface morphological studies have been carried out for un-irradiated and irradiated film and revealed that the grain sizes and crystallinity are strongly depended on gamma irradiation doses. The leakage current is increased with increasing gamma irradiation doses due to creation of charge carriers and large numbers of defect in close proximity, provided path for charge carriers. The capacitance of the IDC devices decreased with increasing gamma dose up to 50 kGy and thereafter capacitance gradually increased with radiation doses and reached higher than the un-irradiated device at 600 kGy for 1 MHz frequency. The observed tunability ( $\sim 25\% $ ) of the un-irradiated device was found nearly constant with gamma irradiation doses. This study shows that gamma ray induced defects play important role to the electrical properties of the devices and the BST based devices are highly resistant to gamma radiation, which reflects possible use in space and nuclear applications.
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