Radiation-Induced Modifications of the Electrical Characteristics of Nanocrystal Memory Cells and Arrays

Abstract

Proton irradiation of nanocrystals memories produces peculiar radiation effects on the electrical characteristics of these devices, owing to their thin tunnel oxide and to the presence of nanocrystals replacing the conventional flash memory floating gate. In this work, we show that the data retention capability is compromised only after high fluences and that irradiated devices do not show accelerated degradation during subsequent electrical stresses. The presence of nanocrystals instead of a floating gate reduces also the quantity of charge lost during irradiation, indicating these devices as possible candidates for space and avionic environments