Radiation-induced luminescence properties of Sn-doped hafnium aluminosilicate glass ceramics prepared by using a xenon image furnace

Abstract

In this study, Sn-doped 10HfO2–10Al2O3–80SiO2 glasses were prepared using a xenon imaging furnace and their physical, optical, and scintillation properties were investigated. At the composition ratio, the specimens did not completely vitrify, and they were crystallized glasses that contained nanocrystals of c-HfO2. Raman spectra show the absorption bands due to Si–O–Hf bonds, and the band clearly indicated an effective molecular mingling of SiO2 and HfO2 components in the glass. Moreover, the energy dispersive X-ray spectroscopy maps suggested that the elemental distribution of this glass specimen is heterogeneous. In terms of optical properties of the glass, all the specimens showed emission due to Sn2+, and their tendency to increase photoluminescence quantum yield with increasing Sn concentration. The estimated luminescence from pulse height spectrum measurements under alpha irradiation was ∼2500 ph MeV−1, approximately 35% of the GS-20 glass scintillator counterpart.