Abstract
Results are presented of an extended study on the degradation and recovery behavior of optical and electrical performance and on induced lattice defects of 1.3μm InGaAsP double channel planar buried heterostructure laser diodes with an In0.76Ga0.24As0.55P0.45 multi-quantum well active region, subjected to 1-MeV fast neutron and 1-MeV electron irradiation. The degradation of the device performance increases with increasing fluence. Two hole capture traps with near midgap energy level in the In0.76Ga0.24As0.55P0.45 multi-quantum well active region are observed after 1×1016n/cm2 irradiation. These deep levels are thought to be associated with a Ga-vacancy. The decrease of optical power is related to the induced lattice defects, leading to reduction of the non-radiative recombination lifetime and of the carrier mobility due to scattering.
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