Radiation-induced heterogeneous reactions in BeO + H 2O using EPR

Abstract

Using the EPR method we conducted an investigation into defect formation in BeO and the influence of absorbed H 2O melecules on these processes upon the surface occupation ratio . It has been shown that with γ-radiation at 77 K, electron and hole centers are formed on the BeO surface. In the presence of absorbed water molecules the H radical kinetics of the accumulation of hole and electron centers, as well as the H redical dependence upon surface occupation ratio was studied. A mechanism of radiation-heterogenic processes in BeO + H 2O system at 77 K has been suggested.