Abstract
Electrical properties of defects induced in n-type molecular-beam-epitaxial-grown Al0.14Ga0.86N are studied using deep-level transient spectroscopy (DLTS) to explore the radiation tolerance of AlGaN-based electronic and optoelectronic devices. It has been found that four electron traps labeled R1(0.15±0.02eV), R2(0.21±0.02eV), R3(0.26±0.02eV), and R4(0.33±0.03eV) are created in the electron irradiated Al0.14Ga0.86N. The electron trap R4 is the most prominent radiation-induced defect in the DLTS spectrum and appears to be unique to AlGaN. Although the other radiation-induced traps anneal significantly at or below 400 K, this R4 trap is thermally stable up to 450 K, and could significantly affect the performance of AlGaN-based devices.
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