Abstract
The density of surface states at Si−SiO2 interface is examined for dry and wet oxidization process on 〈111〉 silicon substrate. The trivalent silicon centers are probably responsible for thermal and radiation generated surface states at the Si−SiO2 interface. The dependence of the radiation induced surface state density is compared for various oxide thicknesses and oxidization methods used.
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More From: Journal of Radioanalytical and Nuclear Chemistry Letters
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