Radiation induced defects in n-GaN, an overview

Abstract

We determine, using deep level transient spectroscopy, the electronic and annealing properties of defects introduced in MOVPE grown n-GaN by high energy electron, helium-ion and proton irradiation. As in other semiconductors these three particles introduce electrically active defects in n-GaN. There are 6 electron defects (ER1-ER6) introduced in the hexagonal n-GaN. A deep lying defect (1.04 eV), ER6, was detected and characterised for the first time. Defect ER3 which exhibits a field dependent emission rate has been reported to be the nitrogen vacancy. Defect ER2 appears to have a higher introduction rate when using protons. The deeper lying defects ER4-ER6 which are positioned reasonably close to one another have peak temperature positions which differ depending on the incident particle mass.