Abstract
Radiation-induced defects in 3C-SiC epitaxially grown by a chemical vapor deposition method were studied with the electron spin resonance (ESR) technique. A 15-line ESR spectrum was observed in 2-MeV proton and 1-MeV electron irradiated 3C-SiC when the magnetic field was applied parallel to the <100> axis. This spectrum, T1, which has an isotropic g-value of 2.0029+or-0.0001, was interpreted by simultaneous hyperfine interactions of a paramagnetic electron with the surrounding /sup 13/C at four carbon sites and /sup 29/Si at 12 silicon sites. The T1 spectrum appeared to arise from a point defect at a silicon site. The observed hyperfine interactions with neighboring /sup 13/C and /sup 29/Si nuclei are discussed in terms of a simple molecular-orbital treatment of the defect.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
