Abstract
AbstractTemperature‐dependent optical absorption spectroscopy, high‐resolution X‐ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation‐induced changes in Ge–Sb–S chalcogenide glasses. Theoretically predicted topological scheme of γ‐induced coordination defect formation in stoichiometric Ge23.5Sb11.8S64.7 glass composition is supported by these measurements. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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