Abstract
Presented are the results of studies of some parameters of the Ir-centers in n-Si and of defect production processes in n-Si under the effect of ^{60}Co \gamma-rays. After irradiation with a does of 10^{7} Gy five energy levels have been observed in the DLTS spectrum of n-i. A conclusion has been drawn that of these the E_{c}-0.20 eV level belongs to the \lq\lq P atom +Ir atom + Vacancy" complex, two levels belong to well- known conventional A- and E- centers and the rest to Ir centers in silicon themselves.
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