Abstract
Abstract Deep level transient spectroscopy (DLTS) and low temperature photoluminescence (LTPL) were applied to investigate radiation-induced defect centers and their thermal stability in 4H silicon carbide (SiC) epilayers grown by chemical vapor deposition (CVD). The epilayers were implanted with He+ ions and annealed at different temperatures. Several deep defect levels were monitored with DLTS in the 4H polytype. The correlation of these centers with photoluminescence lines is discussed with respect to appropriate annealing steps.
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