Abstract
A quasi-hydrodynamic model is developed for carrier transport under ionizing irradiation subject to the nonsteady-state thermal effect of the current on the semiconductor lattice. Computer simulations are run for the thermal breakdown of a nonuniformly doped pn junction caused by a pulse of ionizing radiation. The simulation model includes the temperature dependence of electron energy and momentum relaxation times and the suppression of impact ionization with increasing temperature. The simulation results are verified by comparison with previously reported experimental data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
