Abstract
Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co γ-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.
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More From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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