Abstract
Schottky diodes based on 6H-SiC epitaxial films exposed to 1000 MeV protons at a dose of 3×1014 cm−2 have been studied by precision alpha spectrometry. Parameters of deep levels introduced by protons were determined by deep-level transient spectroscopy. The number of vacancies generated in proton tracks was found using TRIM software. The width of the space charge region and the hole diffusion length before and after irradiation were obtained by processing the alpha-spectrometry and capacitance measurements. Minor variations in the charge transport properties of epitaxial 6H-SiC detectors were observed.
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