Abstract
The radiation hardness of polysiloxane based scintillators has been measured by ion beam induced luminescence (IBIL). The light intensity as a function of the irradiation fluence with an He + beam at 1.8 MeV (1.0 μA/cm 2) has been measured on undoped polymers synthesized with different amounts of phenyl units and on polysiloxanes doped with two different dye molecules (BBOT and Lumogen Violet) sensitizing the scintillation yield.
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