Abstract
Radiation hardness of furnace N/sub 2/O-nitrided gate oxides was investigated for both n- and p-channel MOSFETs by exposing devices in an X-ray radiation system. An enhanced degradation was observed in both control and N/sub 2/O-nitrided MOSFETs with reduction in the channel length. Compared to MOSFETs with control oxides, N/sub 2/O-nitrided MOSFETs show an enhanced radiation hardness against positive charge buildup and interface state generation. The effects of channel hot carriers on the irradiated devices with subsequent low-temperature forming gas annealing were also studied. The results show that N/sub 2/O-nitrided oxides have a greatly enhanced resistance against radiation-induced neutral electron trap generation. >
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