Abstract
We studied the effect of Si-ion irradiation on GeSbTe (GST) thin films. Amorphous GST thin films were irradiated with 80 MeV Si ions and studied using XRD, FESEM and UV–Vis-NIR measurements. After irradiation, we observed a slight increase in the particle size and a decrease in the optical bandgap. No phase transition from amorphous to crystalline was observed. Calculations using SRIM software provided insight into the possible reasons for the observed effects of swift heavy ions on GST. These minute changes in optical and micro-structural properties suggested that GST thin films were quite stable and radiation tolerant under the effect of 80 MeV Si ion irradiation.
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