Abstract
Liquid phase deposition (LPD) following rapid thermal oxidation (RTO) is proposed as a method to obtain the fluorinated gate oxides. The radiation effect on these fluorinated oxides prepared by various sequences is studied. It was experimentally observed that all the fluorinated gate oxides are more radiation hard than the rapid thermal oxide (control oxide). Interestingly, the amount of fluorine (F) incorporated in the gate oxides can be easily and precisely controlled by changing the sequences and the times of LPD process and/or RTO treatment.
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