Abstract
We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.
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