Abstract
The radiation response of kesterite Cu2ZnSn(S,Se)4 solar cells was investigated by 10 MeV high-energy protons irradiation. The optoelectronic characteristics of the CZTSSe photovoltaic device with proton irradiation were characterized by EQE, IV, SIMS and TRPL, and the influencing factors of its performance were systematically analyzed. The degradation curves of the irradiated samples were plotted as a function of the proton irradiation fluences. It was found that the radiation hardness of the CZTSSe solar cells was better than that of the traditional solar cells. The main factor for the device performance degradation after proton irradiation was originate from the excess of sodium diffusion from SLG substrate. These results are the first step toward realizing practical application of CZTSSe solar cells in space.
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