Radiation hardness of AlAs/GaAs-based resonant tunneling diodes

Abstract

The total dose effects of 60 Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters up to doses of 2〈10 9 rad. It is shown that all changes in the current-voltage characteristics stem from the effect of ionizing radiation on the undoped lay- ers. The radiation-stimulated diffusion of the heteropair components in the contact region is shown to be important for the voltage drop distribution.