Abstract
Final results for a comprehensive radiation hardness evaluation of a high performance, low cost, 130 nm SiGe BiCMOS technology are presented. After a survey of several available SiGe technologies, one was chosen in terms of performance, power consumption, radiation hardness, and cost and it is presented as a suitable technology for the future upgrades of the ATLAS detector of the High Luminosity LHC. Bipolar devices of different sizes and geometries have been evaluated, along with a prototype Front-End readout ASIC designed for binary readout of silicon microstrip detectors. Gamma, neutron and proton irradiations have been performed up to the expected doses and fluences of the experiment.
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