Abstract
Proton irradiation was carried out on emerging semiconductor laser technologies, including Distributed Bragg Reflector (DBR) and Sampled Grating (SG)- DBR lasers at 1550 nm, as well as Distributed Feedback (DFB) lasers at 935 nm and 1550 nm. Two separate exposure sessions, at low and high doses, were performed, the first to mimic a typical 2-year Earth Observation mission, and the second for more comprehensive radiation hardness assessment. Low dose exposure yielded minimal damage to all lasers, but the 935 nm DFBs did exhibit small changes in tuning efficiency. In-situ measurements on the 1550 nm DFB and DBR lasers show degradation in lasing threshold by 15% and 4% respectively, and the DBR mode structure is maintained but shifts by more than one mode width.
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