Abstract
Abstract The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current, evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard, float-zone silicon containing various atomic impurities and from epitaxial silicon materials. Some recent results concerning their radiation hardness are presented.
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Schedule a callMore From: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
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