Abstract
Ferroelectric (FE) on complementary metal-oxide-semiconductor (CMOS) 4-bit nonvolatile memories, 8-bit octal latches (with and without FE), and process control test chips were used to establish a baseline characterization of the radiation response of CMOS/FE integrated devices and to determine whether the additional FE processing caused significant degradation to the baseline CMOS process. Functional failure of all 4-bit memories and octal latches occurred at total doses of between 2 and 4 krad(Si), most likely due to field-oxide effects in the underlying CMOS. No significant difference was observed between the radiation response of devices with and without the FE film in this commercial process. >
Published Version
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