Abstract

ABSTRACTThe focus of our work is to investigate the role of defects introduced by particle irradiation on the electrical and optical properties of amorphous silicon based alloys. We have studied photovoltaic cells and intrinsic films and have found that irradiation produces electrical and optically active defects which anneal at temperatures less than 200 degrees Celsius. The defects produce sub-band-gap states with a peak 1.4 eV below the conduction band edge; the structure of the material does not appear to be altered as evidenced by the band-tail states. Significant room temperature annealing effects have been observed following 1.00 MeV proton irradiation of intrinsic films.

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