Abstract
This paper investigates the impact of 20 MeV proton irradiation on the current–voltage ( I– V) and capacitance-voltage ( C– V) characteristics of different geometry n +–p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I– V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C– V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly.
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