Abstract
In this paper the effect of space radiation environment on a silicon photo diode is studied. This detector is considered as a part of the optical receiver chain of the satellite and exposed to the radiation and vacuum environment of the space. The hardness of this detector during its confrontation to space environment is an important index for link performance evaluation. This effect is analyzed and simulated with Geant4, and then the simulation results are verified by irradiating protons to the PIN diode detectors.
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