Radiation Effects on CMOS Image Sensors With Sub-2 $\mu{\rm m}$ Pinned Photodiodes

Abstract

CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been irradiated with <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$^{60}{\rm Co}$</tex></formula> source. Based on dark current and temporal noise analysis, we develop and propose a phenomenological model to explain pixel performance degradation.