Abstract
The all thin film amorphous memory element, with its improved mechanical stability, has provided the scientific community with a much more acceptable vehicle on which to study radiation effects. This paper summarizes the results of a study of the effects of 10 16 neutrons/cm 2 ( e > 10 keV) and 3.3 × 10 7 R of fission gamma rays on memory elements structured on silicon substrates.
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