Abstract
Radiation defects induced in planar nanosized structures by steady and pulsed ionizing radiation have been analyzed. Characteristics of test samples with a planar nanosized structure fabricated by deposition of an ultrathin titanium film onto a semi-insulating GaAs substrate and of field-effect transistor structures based on bundles of carbon nanotubes have been studied. Physical mechanisms responsible for the radiation-induced changes in characteristics of the nanoelectronic elements under consideration have been established.
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