Radiation effects in low power and ultra low power voltage references

Abstract

This work investigates the effects of ionizing radiation in low power and ultra-low power voltage references. Two specific circuits were selected as case studies, both designed in IBM 130nm technology. By means of SPICE simulation, the electrical equivalent effects of Total Ionizing Dose (TID) were simulated, corresponding to a total dose of 500krad. A worst case simulation of Single Event Transients (SET) was also performed. Results indicate a better behavior under radiation (TID) for low power voltage references than the observed for the ultra-low power counterpart. The temperature of operation affects the ultra-low power circuits changing the circuit response for the simulated SETs, while for low power circuits the results are not affected. The particularities of low power circuit that make them vulnerable to radiation effects are pointed out and possible mitigation strategies are discussed.