Abstract
Cobalt60, 60 MeV proton and heavy ion tests have been performed on InGaAs and amorphous silicon microbolometer arrays with CMOS readout circuits. The readout circuits showed latch-up at threshold LETs~14 MeV/mg/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , but the total dose and displacement damage effects were negligible for low earth orbit conditions. Effects in a microbolometer array tested, for use in Mercury orbit, to 100 krd(Si) and 3.2 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> 60 MeV p/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> showed acceptable performance, though there was a significant increase in power consumption for the CMOS readout circuit when biased during cobalt60 irradiation.
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