Abstract
Abstract This paper highlights important aspects related to irradiation effects in bulk silicon. Some basic principles related to the interaction of radiation with material, i.e. ionization and atomic displacement, are briefly reviewed. A physical understanding of radiation effects strongly depends on the availability of appropriate analytical tools. These tools are critically accessed from a silicon bulk viewpoint. More detailed information, related to the properties of the bulk damage and some dedicated application aspects, is given for both electron and proton irradiations. Emphasis is placed on radiation environments encountered during space missions and on their influence on the electrical performance of devices such as memories and image sensors.
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