Abstract
We present the radiation effect models for solar cells used in NanoTCAD device simulator and provide comparison with experimentally measured on solar cell performance. The device modeled is a p+ n GaAs solar cell. Dark, Light IV curves and corresponding performance parameters are simulated and compared with experimental results for 2 MeV protons at varying fluence. Majority carrier defect introduction rates for n-type GaAs used in the NanoTCAD simulations were taken from deep level transient spectroscopy (DLTS) data provided by the Naval Research Lab (NRL). Results show a good match between simulations and experimental results.
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