Abstract
The influence of γ-irradiation on the interface states in ion-implanted MOS samples was studied by the thermally stimulated current (TSC) method. Two groups of MOS based on n- and p-type Si-wafers and oxide thickness of 110nm were implanted with 65keV silicon ions at dose of 1.2×1012cm−2. After implantation the samples were exposed to γ-radiation at doses varying from 104 to 106rad. The energy position and the concentration of interface traps before and after the gamma irradiation were determined. The electron levels at the Si–SiO2 interface created by the irradiation were found to depend on the type of silicon wafers used. The TSC of p-type MOS samples was extended to higher temperatures then for n-type, and their increment with γ-dose was larger.
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