Radiation Defects in Heterostructures 3C-SiC/4H-SiC

A.A Lebedev,G.A Oganesyan,P.V Bulat,I.A Eliseyev,V.V Kozlovski

doi:10.3390/cryst9020115

A.A Lebedev, G.A Oganesyan + Show 3 more

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https://doi.org/10.3390/cryst9020115

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Abstract

The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm−1, which is close to Vd in 4H-SiC. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3C-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes.

Highlights

It is known that silicon carbide (SiC) is a promising material for development of high-temperature, high-power, and high-frequency devices
The peaks at 796.5 cm−1 and 973.8 cm−1 can be attributed to the TO and LO of 3C-SiC
−1 and 973.8 cm−1 can be attributed to the TO and LO of 3C-SiC optical modes

Summary

Introduction

It is known that silicon carbide (SiC) is a promising material for development of high-temperature, high-power, and high-frequency devices. Among the multitude of SiC polytypes, 3C-SiC is distinguished by the highest electron mobility, which is one of the most important characteristics of a material for the manufacture of devices. No industrial growth technology of 3C-SiC substrates has been developed so far, and, 3C-SiC layers are most frequently grown on silicon substrates. These layers have a poor crystal perfection because of the large lattice mismatch between Si and SiC (~20%). It is of interest to examine the growth of 3C-SiC on the available substrates of other polytypes (4H-SiC, 6H-SiC), the lattice constants of which differ in the third decimal place. The main difficulty involves the numerous twinning regions that appear in the initial stage of the epitaxial growth

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