Radiation Defects and Annealing Study on PNP Bipolar Junction Transistors Irradiated by 3-MeV Protons

Abstract

A combined radiation effect is produced by 3-MeV protons, giving by both ionization and displacement damage, on semiconductor devices. In this paper, electrical characteristics and deep level transient spectroscopy (DLTS) are used to measure the radiation defects induced by ionization and displacement damage during the annealing process. A nonlinear relationship between the proton fluence and radiation response is clearly observed in the 3CG110 PNP bipolar junction transistor (BJT). DLTS analysis technique and annealing response of BJTs can provide important information on the nature of the ionization and displacement-induced defects, and measure them quantitatively, especially for the BJT with the combined radiation damage induced by protons. Based on the results of DLTS measurement and current gain annealing, the evolution of the ionization and displacement defects during the irradiation and annealing process is revealed, and the relationship between defects and current gain annealing is studied.