Abstract
An investigation of the influence of germanium doping (⩽1 at. %) on the formation efficiency of the main secondary radiation defects in silicon under low-temperature (T⩽90 K) electron irradiation has been carried out. The significant decrease of the formation efficiency of A and V2 centers in Si〈Ge〉 is explained by assuming that the germanium atoms are indirect recombination centers of primary radiation defects (V and I) in Si〈Ge〉.
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