Radiation damaging behaviour of GaP by MeV ion implantation

Abstract

The creation of defects in GaP bombarded with energetic ions has been studied and compared with TRIM calculations. To investigate the influence of the relation of nuclear to electronic energy deposition and of the size of displacement cascades on defect production, the atomic species and projectile energies were varied from Z = 1 to 20 and E = 0.3 to 175 MeV. It has been found that not only the nuclear energy deposition but also the electronic energy deposition influences the defect production.