Abstract
Channeling measurements on V 3Ge and V 3Si single crystals, which have been irradiated with He-ions, revealed a considerable narrowing of the angular yield curves for the B-atom sublattices. Analysing the data with a computer simulation, the best agreement with the experiment was achieved by adding a static contribution to the thermal vibration amplitudes. After irradiation with He-fluences, which cause a saturation in the degradation of the superconducting transition temperature in the V 3Ge and V 3Si films, it was concluded that the average static displacement amplitude was 0.006 nm for the Ge-atoms and 0.01 nm for the Si-atoms.
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